DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues

Articolo
Data di Pubblicazione:
2005
Citazione:
DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issues / Verzellesi, Giovanni; Meneghesso, G.; Chini, Alessandro; Zanoni, E.; Canali, Claudio. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 45:9-11(2005), pp. 1585-1592. [10.1016/j.microrel.2005.07.064]
Abstract:
The performance and reliability implications of DC-to-RF dispersion effects are addressed. The proposed physical explanations and technological counteractions are reviewed. GaAs- and GaN-based FET technologies are considered, trying to point out both similar and peculiar aspects.
Tipologia CRIS:
Articolo su rivista
Keywords:
Gallium Arsenide; Gallium Nitride; HEMTs; HFETs; gate lag; drain lag; transconductance dispersion; current collapse; reliability.
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/304701
Pubblicato in:
MICROELECTRONICS RELIABILITY
Journal