Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs
Chapter
Publication Date:
2002
Short description:
Advanced Physically Based Device Modeling for Gate Current and Hot Carrier Phenomena in Scaled MOSFETs / Palestri, P., Selmi, L., Dalla Serra, A., Abramo, A., Sangiorgi, E., M., P., P., R., F., W. - In: Future Trends in Microelectronics: The Nano Millennium / S.Luryi and J.Xu and A.Zaslavsky ; [a cura di] S. Luryi J. Xu A. Zaslavsky. - USA : Wiley, 2002. - ISBN 0471212474. - pp. 99-112
Iris type:
Capitolo/Saggio
List of contributors:
Palestri, Pierpaolo; Selmi, Luca; Dalla Serra, Alberto; Abramo, Antonio; Sangiorgi, Enrico; M., Pavesi; P., Rigolli; F., Widdershoven
Book title:
Future Trends in Microelectronics: The Nano Millennium