Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs

Academic Article

Publication Date:

2003

Short description:

Physically Based modeling of Low Field Electron Mobility in Ultrathin Single- and Double-Gate SOI n-MOSFETs / Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 50:12(2003), pp. 2445-2455. [10.1109/TED.2003.819256]

Iris type:

Articolo su rivista

Keywords:

Mobility modeling; Scattering mechanisms; Silicon thickness fluctuations; SOI MOSFETs; Ultrathin silicon thicknesses;

List of contributors:

Esseni, David; Abramo, Antonio; Selmi, Luca; Sangiorgi, Enrico

Authors of the University:

SELMI LUCA

Handle:

https://iris.unimore.it/handle/11380/1162951

Published in:

IEEE TRANSACTIONS ON ELECTRON DEVICES

Journal