An Experimental Study of Mobility Enhacement in Ultra-Thin SOI Transistors Operated in Double-Gate Mode

Academic Article

Publication Date:

2003

Short description:

An Experimental Study of Mobility Enhacement in Ultra-Thin SOI Transistors Operated in Double-Gate Mode / Esseni, David; M., Mastrapasqua; G. K., Celler; C., Fiegna; Selmi, Luca; E., Sangiorgi. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 50:3(2003), pp. 802-808. [10.1109/TED.2002.807444]

Iris type:

Articolo su rivista

Keywords:

Deep-submicron MOSFETs; Double-gate; Lowfield mobility; Silicon thickness dependence; Ultrathin SOI MOSFETs;

List of contributors:

Esseni, David; M., Mastrapasqua; G. K., Celler; C., Fiegna; Selmi, Luca; E., Sangiorgi

Authors of the University:

SELMI LUCA

Handle:

https://iris.unimore.it/handle/11380/1162958

Published in:

IEEE TRANSACTIONS ON ELECTRON DEVICES

Journal