Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application

Articolo
Data di Pubblicazione:
2001
Citazione:
Low Field Electron and Hole Mobility of SOI Transistors Fabricated on Ultra-Thin Silicon Films for Deep Sub-Micron Technology Application / Esseni, David; Mastrapasqua, M.; Celler, G.; Fiegna, C.; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 48:12(2001), pp. 2842-2850. [10.1109/16.974714]
Tipologia CRIS:
Articolo su rivista
Keywords:
Mobility; SOI MOSFETs; SOI performance; Ultrathin silicon films;
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/1162962
Pubblicato in:
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal