Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime

Academic Article

Publication Date:

2002

Short description:

Damage generation and location in n- and p-MOSFETs biased in the substrate-enhanced gate current regime / Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 49:5(2002), pp. 787-794. [10.1109/16.998585]

Iris type:

Articolo su rivista

Keywords:

Channel hot carrier (CHC); CHISEL; Damage profiling; Flash memories; Hot carrier degradation; Substrate bias;

List of contributors:

Driussi, Francesco; Esseni, David; Selmi, Luca; Fausto, Piazza

Authors of the University:

SELMI LUCA

Handle:

https://iris.unimore.it/handle/11380/1163165

Published in:

IEEE TRANSACTIONS ON ELECTRON DEVICES

Journal