BipFLASH: a Novel Non-Volatile Memory Cell Concept for High Speed - Low Power Applications

We present a novel non-volatile memory cell architecture, which remarkably improves injection efficiency overconventional channel hot electron programming. We show how this superior performance can be traded to achieve either lowvoltage-low power or high-speed operation. The cell concept is validated by means of numerical device simulations. Criteriafor device optimization are also discussed.