Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain
Academic Article
Publication Date:
2005
Short description:
Understanding Quasi-Ballistic Transport in nano-MOSFETs. Part I:Scattering in the Channel and in the Drain / Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 52:12(2005), pp. 2727-2735. [10.1109/TED.2005.859593]
abstract:
In this paper, and in Part II, Monte Carlo (MC) simulations including quantum corrections to the potential and calibrated scattering models are used to study electronic transport in bulk and double-gate silicon-on-insulator MOSFETs with L-G down to 14-nm designed according to the 2003 International Technology Roadmap for Semiconductors. Simulations with and without scattering are used to assess the influence of quasi-ballistic transport on the MOSFET on-current. We analyze in detail the flux of back-scattered carriers. The role of scattering in different parts of the device is clarified and the MC results are compared to simple models for quasi-ballistic transport presented in the literature.
Iris type:
Articolo su rivista
Keywords:
Back-scattering; ballistic transport; Monte Carlo (MC) method; MOSFETs; semiconductor device modeling; silicon- on-insulator (SOI)
List of contributors:
Palestri, Pierpaolo; Esseni, David; S., Eminente; C., Fiegna; E., Sangiorgi; Selmi, Luca
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