Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines
Academic Article
Publication Date:
2017
Short description:
Graphene base transistors with bilayer tunnel barriers: Performance evaluation and design guidelines / Venica, Stefano; Driussi, Francesco; Vaziri, Sam; Palestri, Pierpaolo; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 64:2(2017), pp. 593-598. [10.1109/TED.2016.2636447]
abstract:
Graphene-based capacitors and Graphene base transistors (GBTs) featuring innovative engineered tunnel barriers are characterized in DC and the data are thoroughly analyzed by means of an electrical model and a Monte Carlo transport simulator. Following model calibration on experiments, we then propose strategies to improve the DC common-base current gain and the cutoff frequency of GBTs. The DC and RF performance of optimized GBT structures based on realistic technology data are analyzed in detail to highlight advantages and potential limits of this device concept.
Iris type:
Articolo su rivista
Keywords:
Analog RF devices; graphene-based devices; modeling
List of contributors:
Venica, Stefano; Driussi, Francesco; Vaziri, Sam; Palestri, Pierpaolo; Selmi, Luca
Published in: