Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs

Academic Article

Publication Date:

2001

Short description:

Closed- and Open- boundary Models for Gate-Current calculation in n-MOSFETs / Dalla Serra, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 48:8(2001), pp. 1811-1815. [10.1109/16.936711]

Iris type:

Articolo su rivista

Keywords:

Leakage current; MOS devices; Quantum effects; Resonant tunneling;

List of contributors:

Dalla Serra, Alberto; Abramo, Antonio; Palestri, Pierpaolo; Selmi, Luca; Widdershoven, F.

Authors of the University:

PALESTRI Pierpaolo

SELMI LUCA

Handle:

https://iris.unimore.it/handle/11380/1163388

Published in:

IEEE TRANSACTIONS ON ELECTRON DEVICES

Journal