On Interface and Oxide Degradation in VLSI MOSFETs, Part II: Fowler-Nordheim Stress Regime

Academic Article
Publication Date:
2002
Short description:
On Interface and Oxide Degradation in VLSI MOSFETs, Part II: Fowler-Nordheim Stress Regime / Esseni, David; Bude, J.; Selmi, Luca. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 49:2(2002), pp. 254-263. [10.1109/16.981215]
Iris type:
Articolo su rivista
Keywords:
Anode hole injection (AHI); High fields oxide stress; Interface states; MOSFETs reliability; Stress-induced leakage current (SILC);
List of contributors:
Authors of the University:
Handle:
https://iris.unimore.it/handle/11380/1163406
Published in:
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal