Data di Pubblicazione:
2012
Citazione:
Enhancement-/depletion-PHEMT device and manufacturing method thereof / Chini, Alessandro; Lanzieri, Claudio. - (2012 Jul 31).
Abstract:
The present invention relates, in general, to enhancement/ depletion Pseudomorphic High Electron Mobility
Transistors (PHEMTs) and, in particular, to an enhancement/depletion PHEMT device and a method for manufacturing enhancement/depletion PHEMT devices that finds advantageous, but not exclusive, application
in the production of integrated circuits operating at millimetre-wave and microwave frequencies.
Transistors (PHEMTs) and, in particular, to an enhancement/depletion PHEMT device and a method for manufacturing enhancement/depletion PHEMT devices that finds advantageous, but not exclusive, application
in the production of integrated circuits operating at millimetre-wave and microwave frequencies.
Tipologia CRIS:
Brevetto
Keywords:
HEMT, Power FET
Elenco autori:
Chini, Alessandro; Lanzieri, Claudio
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