Failure mechanisms in compound semiconductor electron devices

Capitolo di libro
Data di Pubblicazione:
2001
Citazione:
Failure mechanisms in compound semiconductor electron devices / Fantini, F., R., M., Borgarino, M., L., C., D., D. - In: Semiconductor Devices / HARI SINGH NALWA. - STAMPA. - SAN DIEGO : Academic Press, 2001. - ISBN 0125137524. - pp. 155-170
Abstract:
In this chapter, we review the main failure mechanisms that affect advanced compound semiconductor electron devices such as high electron mobility transistors (HEMTs) and heterostructure bipolar transistors (HBTs).
Tipologia CRIS:
Capitolo/Saggio
Keywords:
Reliability. Accelerated tests. Compound semiconductors. FET. HEMT. HBT
Elenco autori:
Autori di Ateneo:
Link alla scheda completa:
https://iris.unimore.it/handle/11380/308346
Titolo del libro:
Semiconductor Devices