Publication Date:
2001
Short description:
Failure mechanisms in compound semiconductor electron devices / Fantini, F., R., M., Borgarino, M., L., C., D., D. - In: Semiconductor Devices / HARI SINGH NALWA. - STAMPA. - SAN DIEGO : Academic Press, 2001. - ISBN 0125137524. - pp. 155-170
abstract:
In this chapter, we review the main failure mechanisms that affect advanced compound semiconductor electron devices such as high electron mobility transistors (HEMTs) and heterostructure bipolar transistors (HBTs).
Iris type:
Capitolo/Saggio
Keywords:
Reliability.
Accelerated tests.
Compound semiconductors.
FET.
HEMT.
HBT
List of contributors:
Fantini, Fausto; R., Menozzi; Borgarino, Mattia; L., Cattani; D., Dieci
Book title:
Semiconductor Devices