Random telegraph noise in 2D hexagonal boron nitride dielectric films

This study reports the observation of low frequency random telegraph noise (RTN) in a 2D layered hexagonal boron nitride dielectric film in the pre- and post-soft breakdown phases using conductive atomic force microscopy as a nanoscale spectroscopy tool. The RTN traces of the virgin and electrically stressed dielectric (after percolation breakdown) were compared, and the signal features were statistically analyzed using the Factorial Hidden Markov Model technique. We observe a combination of both two-level and multi-level RTN signals in h-BN, akin to the trends commonly observed for bulk oxides such as SiO2 and HfO2. Experimental evidence suggests frequent occurrence of unstable and anomalous RTN traces in 2D dielectrics which makes extraction of defect energetics challenging.