Data di Pubblicazione:
2001
Citazione:
Noise behavior in SiGe devices / M., Regis; Borgarino, Mattia; L., Bary; O., Llopis; J., Graffeuil; L., Escotte; U., Koenig; R., Plana. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 45:11(2001), pp. 1891-1897. [10.1016/S0038-1101(01)00229-5]
Abstract:
This paper presents an overview of SiGe technologies and their corresponding noise properties both in the high frequency and low frequency range. We demonstrate that SiGe bipolar technology exhibits impressive low frequency noise performance with an excess corner noise frequency in the 1kHz range. These results have been validated by low phase noise microwave oscillators based on SiGe material.
Tipologia CRIS:
Articolo su rivista
Keywords:
low frequency nosie; phase noise; microwave noise; SiGe; heterojunction bipolar transistor
Elenco autori:
M., Regis; Borgarino, Mattia; L., Bary; O., Llopis; J., Graffeuil; L., Escotte; U., Koenig; R., Plana
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