Advanced modeling and characterization techniques for innovative memory devices: The RRAM case
Capitolo di libro
Data di Pubblicazione:
2019
Citazione:
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case / Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca. - (2019), pp. 103-135. [10.1016/B978-0-08-102584-0.00004-8]
Tipologia CRIS:
Capitolo/Saggio
Keywords:
Charge transport; Defects; Dielectric breakdown; Electrical characterization; Modeling and simulation; Noise; Reliability; RRAM;
Elenco autori:
Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca
Link alla scheda completa:
Titolo del libro:
Advances in Non-Volatile Memory and Storage Technology (Second Edition)