Advanced modeling and characterization techniques for innovative memory devices: The RRAM case

Chapter

Publication Date:

2019

Short description:

Advanced modeling and characterization techniques for innovative memory devices: The RRAM case / Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca. - (2019), pp. 103-135. [10.1016/B978-0-08-102584-0.00004-8]

Iris type:

Capitolo/Saggio

Keywords:

Charge transport; Defects; Dielectric breakdown; Electrical characterization; Modeling and simulation; Noise; Reliability; RRAM;

List of contributors:

Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca

Authors of the University:

PADOVANI ANDREA

PAVAN Paolo

PUGLISI Francesco Maria

Handle:

https://iris.unimore.it/handle/11380/1190097

Book title:

Advances in Non-Volatile Memory and Storage Technology (Second Edition)