Advanced modeling and characterization techniques for innovative memory devices: The RRAM case
Capitolo di libro
Data di Pubblicazione:
2019
Citazione:
Advanced modeling and characterization techniques for innovative memory devices: The RRAM case / Puglisi, F.M., Padovani, A., Pavan, P., Larcher, L. - In: Advances in Non-Volatile Memory and Storage Technology (Second Edition)[s.l] : Elsevier, 2019. - ISBN 9780081025840. - pp. 103-135 [10.1016/B978-0-08-102584-0.00004-8]
Tipologia CRIS:
Capitolo/Saggio
Keywords:
Charge transport; Defects; Dielectric breakdown; Electrical characterization; Modeling and simulation; Noise; Reliability; RRAM;
Elenco autori:
Puglisi, Francesco Maria; Padovani, Andrea; Pavan, Paolo; Larcher, Luca
Link alla scheda completa:
Titolo del libro:
Advances in Non-Volatile Memory and Storage Technology (Second Edition)