Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs

Academic Article

Publication Date:

1987

Short description:

Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs / C., Canali; Fantini, Fausto; A., Scorzoni; L., Umena; E., Zanoni. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 34:(1987), pp. 205-211. [10.1109/T-ED.1987.22906]

abstract:

Degradation mechanisms induced by high current density in Al-gate GaAs MESFETs

Iris type:

Articolo su rivista

Keywords:

MESFET Aluminium Degradation

List of contributors:

C., Canali; Fantini, Fausto; A., Scorzoni; L., Umena; E., Zanoni

Handle:

https://iris.unimore.it/handle/11380/451798

Published in:

IEEE TRANSACTIONS ON ELECTRON DEVICES

Journal