Failures induced by electromigration in ECL 100k devices

Articolo

Data di Pubblicazione:

1984

Citazione:

Failures induced by electromigration in ECL 100k devices / C., Canali; Fantini, Fausto; E., Zanoni; A., Giovannetti; P., Brambilla. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 24:(1984), pp. 77-100. [10.1016/0026-2714(84)90641-1]

Abstract:

Reliability of ECL 100k devices using Al (4%wt Cu, 1%wt Si) double level metallization, isoplanar technology with shallow, 0.25 micron, base-emitter junctions was evaluated by means of high current and high temperature stresses.

Tipologia CRIS:

Articolo su rivista

Keywords:

Electromigration. Emitter Coupled Logic.

Elenco autori:

C., Canali; Fantini, Fausto; E., Zanoni; A., Giovannetti; P., Brambilla

Link alla scheda completa:

https://iris.unimore.it/handle/11380/451809

Pubblicato in:

MICROELECTRONICS RELIABILITY

Journal