高电子迁移率晶体管

This disclosure relates to high electron mobility transistor.HEMT includes buffer layer, the hole accommodating layer on buffer layer, heterojunction structure and source electrode on the accommodating layer of hole.Hole accommodating layer is made of p-type doped semiconductor materials, and undoped buffer layer has carbon, and source electrode is directly in electrical contact with hole accommodating layer, allows transmission of the hole accommodating layer by biasing to promote hole from hole accommodating layer to buffer layer.Embodiment of the disclosure makes it possible in the case where not reducing breakdown threshold and not increasing the value of on state resistance before stress, eliminates influence of the stress on state resistance.