Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS
Articolo
Data di Pubblicazione:
2001
Citazione:
Improvement in breakdown characteristics with multiguard structures in microstrip silicon detectors for CMS / Bacchetta, N.; Bisello, D.; Candelori, A.; Da Rold, M.; Descovich, M.; Kaminsky, A.; Messineo, A.; Rizzo, F.; Verzellesi, Giovanni. - In: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT. - ISSN 0168-9002. - STAMPA. - 461:1-3(2001), pp. 204-206. [10.1016/S0168-9002(00)01207-9]
Abstract:
To obtain full charge collection the CMS silicon detectors should be able to operate at high bias voltage. We observed that multiguard structures enhance the breakdown performance of the devices on several tens of baby detectors designed for CMS. The beneficial effects of the multiguard structures still remains after the strong neutron irradiation performed to simulate the operation at the LHC.
Tipologia CRIS:
Articolo su rivista
Keywords:
p–n junctions; neutron radiation effects; semiconductors; tracking; position sensitive detectors.
Elenco autori:
Bacchetta, N.; Bisello, D.; Candelori, A.; Da Rold, M.; Descovich, M.; Kaminsky, A.; Messineo, A.; Rizzo, F.; Verzellesi, Giovanni
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