Junction heterostructures for high performance electronics

The exploding market in mm-wave wireless communications market requires a simple transistor technology which: (i) exhibits high performance across a wide bias range to perform both transmit and receive operations; (ii) has high threshold uniformity to enable high density, high speed signal processing circuits; and (iii) has basic technological requirements which is relatively transparent to both commercially important materials, InP and GaAs. The heterojunction transistor technology presented here satisfies these requirements.