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Porous silicon modelled as idealised quantum wires

Capitolo di libro
Data di Pubblicazione:
1997
Citazione:
Porous silicon modelled as idealised quantum wires / Ossicini, Stefano. - STAMPA. - 18:(1997), pp. 207-211.
Abstract:
The book can be roughly divided into three sections, covering porous silicon preparation and structure, its physical properties, and optoelectronic and other applications. Anyone who has worked on porous silicon will confirm that the large initial section on preparation and structural characterisation is essential for a critical analysis of this material. In the next section of the book, a comprehensive survey of mechanical, chemical, optical and electronic properties is given. There are many instances where conflicting experimental information is presented to demonstrate that an understanding of the structure and composition of individual samples is paramount to an understanding of the optoelectronic properties. The last section proves that the field is developing fast, with reports on miniaturisation and the first industrial applications to be taken up by giant electronics corporations.
Tipologia CRIS:
Capitolo/Saggio
Keywords:
Porous silicon; modelling
Elenco autori:
Ossicini, Stefano
Autori di Ateneo:
OSSICINI Stefano
Link alla scheda completa:
https://iris.unimore.it/handle/11380/462505
Titolo del libro:
Porperties of Porous Silicon
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