Impact-ionization effects in advanced Si bipolar transistors

Chapter
Publication Date:
1993
Short description:
Impact-ionization effects in advanced Si bipolar transistors / Verzellesi, G., Pavan, P., E., Z., Canali, C. - In: Process and Device Modeling for Microelectronics / G. BACCARANI. - STAMPA. - Amsterdam : Elsevier Science Publishers B.V., 1993. - ISBN 9780444899620. - pp. 269-324 [10.1063/1.349391]
abstract:
Non disponibile
Iris type:
Capitolo/Saggio
Keywords:
Impact ionization; bipolar junction transistor; BJT.
List of contributors:
Authors of the University:
Handle:
https://iris.unimore.it/handle/11380/462672
Book title:
Process and Device Modeling for Microelectronics