Skip to Main Content (Press Enter)

Logo UNIMORE
  • ×
  • Home
  • Degree programmes
  • Modules
  • Jobs
  • People
  • Research Outputs
  • Academic units
  • Third Mission
  • Projects
  • Skills

UNI-FIND
Logo UNIMORE

|

UNI-FIND

unimore.it
  • ×
  • Home
  • Degree programmes
  • Modules
  • Jobs
  • People
  • Research Outputs
  • Academic units
  • Third Mission
  • Projects
  • Skills
  1. Research Outputs

Impact ionization phenomena in AlGaAs/GaAs HBTs

Conference Paper
Publication Date:
1993
Short description:
Impact ionization phenomena in AlGaAs/GaAs HBTs / Di Carlo, A.; Lugli, P.; Pavan, P.; Zanoni, E.; Malik, R.. - (1993), pp. 135-138. ( 22nd European Solid State Device Research Conference, ESSDERC 1992 bel 1992).
abstract:
Ionization phenomena in AlGaAs/GaAs HBTs are theoretically and experimentally investigated. The measured multiplication factor correlates well to the results of a Monte Carlo simulation of the device, which also provides general microscopic details of the pre-avalanche regime, and evidences the role of dead-space effects.
Iris type:
Relazione in Atti di Convegno
List of contributors:
Di Carlo, A.; Lugli, P.; Pavan, P.; Zanoni, E.; Malik, R.
Authors of the University:
PAVAN Paolo
Handle:
https://iris.unimore.it/handle/11380/1248302
Book title:
European Solid-State Device Research Conference
Published in:
PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE
Series
  • Use of cookies

Powered by VIVO | Designed by Cineca | 26.4.5.0