The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs
Contributo in Atti di convegno
Data di Pubblicazione:
2007
Citazione:
The Monte Carlo approach to transport modeling in deca-nanometer MOSFETs / Sangiorgi, E.; Palestri, P.; Esseni, D.; Fiegna, C.; Selmi, L.. - 2007:(2007), pp. 48-57. ( ESSDERC 2007 - 37th European Solid-State Device Research Conference Munich, deu 2007) [10.1109/ESSDERC.2007.4430881].
Abstract:
In this paper, we review recent developments of the Monte Carlo approach to the simulation of semi-classical carrier transport in nano-MOSFETs, with particular focus on the inclusion of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential) and on the numerical stability issues related to the coupling of the transport with the Poisson equation. Selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials. © 2007 IEEE.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Sangiorgi, E.; Palestri, P.; Esseni, D.; Fiegna, C.; Selmi, L.
Link alla scheda completa:
Titolo del libro:
ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference
Pubblicato in: