包括场板区域的hemt晶体管及其制造工艺

The HEMT transistor includes a semiconductor body having a semiconductor heterostructure. A gate region of conductive material is disposed on and in contact with the semiconductor body. The first insulating layer extends laterally over the semiconductor body to the conductive gate region. The second insulating layer extends over the first insulating layer and the gate region. A first field plate region of conductive material extends between the first and second insulating layers, laterally separated from the conductive gate region along a first direction. A second field plate region of conductive material extends over the second insulating layer and overlies and is vertically aligned with the first field plate region.