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Electron diffraction with ten nanometer beam size for strain analysis of nanodevices

Articolo
Data di Pubblicazione:
2008
Citazione:
Electron diffraction with ten nanometer beam size for strain analysis of nanodevices / A., Armigliato; Frabboni, Stefano; G. C., Gazzadi. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 93:(2008), pp. 161906-1-161906-3. [10.1063/1.3003581]
Abstract:
A method to perform nanobeam diffraction (NBD) in a transmission electron microscope with high spatial resolution and low convergence angle is proposed. It is based on the use of a properly fabricated condenser aperture of 1 mu m in diameter, which allows an electron beam about 10 nm in size to be focused on the sample, with a convergence angle in the 0.1 mrad range. Examples of NBD patterns taken in an untilted < 110 > cross section of a silicon device are shown. Their quality is adequate for spot position determination and hence to obtain, in principle, quantitative strain information. (C) 2008 American Institute of Physics. {[}DOI: 10.1063/1.3003581]}
Tipologia CRIS:
Articolo su rivista
Keywords:
electron diffraction; electronic devices
Elenco autori:
A., Armigliato; Frabboni, Stefano; G. C., Gazzadi
Autori di Ateneo:
FRABBONI Stefano
Link alla scheda completa:
https://iris.unimore.it/handle/11380/596262
Pubblicato in:
APPLIED PHYSICS LETTERS
Journal
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