Flexible In-Ga-Zn-O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing

Articolo

Data di Pubblicazione:

2018

Citazione:

Flexible In-Ga-Zn-O Thin-Film Transistors With Sub-300-nm Channel Lengths Defined by Two-Photon Direct Laser Writing / Petti, L; Greco, E; Cantarella, G; Münzenrieder, N; Vogt, C; Troster, G. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 65:9(2018), pp. 3796-3802. [10.1109/TED.2018.2851926]

Tipologia CRIS:

Articolo su rivista

Keywords:

Flexible electronics; mechanical strain; transit frequency; indium-gallium-zinc oxide (IGZO); thin-film transistor (TFT)

Elenco autori:

Petti, L; Greco, E; Cantarella, G; Münzenrieder, N; Vogt, C; Troster, G

Autori di Ateneo:

CANTARELLA Giuseppe

Link alla scheda completa:

https://iris.unimore.it/handle/11380/1290909

Pubblicato in:

IEEE TRANSACTIONS ON ELECTRON DEVICES

Journal