A HydroDynamic Model for Trap-Assisted Tunneling Conduction in Ovonic Devices

Electrical conduction in ovonic threshold switching (OTS) devices is described by introducing a new physical model where the multiphonon trap-assisted tun-neling (TAT) is coupled to a hydrodynamic theory. Static and transient electrical responses from Ge(x)Se(1-x )experimental devices are reproduced, outlining the role played by the material properties like mobility gap and defects in tuning the OTS performances. A clear physical interpretation of the mechanisms ruling the different OTS conduction regimes (off, threshold, on) is presented. A nanoscopic picture of the processes featuring the carrier transport is also given. The impact of geometry, temperature, and material mod-ifications on device performance is discussed providing physical insight into the optimization of OTS devices.