MICROSCOPIC ASPECTS OF SI-GE HETEROJUNCTION FORMATION

We present the results of an investigation of the electronic structure of heterojunctions formed by deposition of Germanium on Si (lll) surfaces. Energy Loss Spectra for various Ge coverages have been taken and compared with theoretical calculations. The results indicate that the interface is abrupt and at low coverages Ge is deposited uniformly on the substrate. Above 2 monolayers coverage modifications in the electronic structure appear probably caused by the growth mechanism.