Publication Date:
2003
Short description:
A Methodology to Extract the Channel Current of Permeable Gate Oxide MOSFETs / Palestri, P; Esseni, D.; Selmi, L.; Guegan, G.; Sangiorgi, E.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 50:5(2003), pp. 1314-1321. [10.1109/TED.2003.813245]
Iris type:
Articolo su rivista
Keywords:
Gate leakage; Mobility extraction; MOSFETs; Parameter extraction; Ultrathin oxide;
List of contributors:
Palestri, P; Esseni, D.; Selmi, L.; Guegan, G.; Sangiorgi, E.
Published in: