Dynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect
Academic Article
Publication Date:
2023
Short description:
Dynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect / Gao, Z; De Santi, C; Rampazzo, F; Saro, M; Fornasier, M; Meneghesso, G; Meneghini, M; Chini, A; Verzellesi, G; Zanoni, E. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 70:12(2023), pp. 6256-6261. [10.1109/TED.2023.3326781]
abstract:
The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain current, during a drain voltage sweep and leading to a higher drain current saturation value. We report new experimental data concerning the dynamic behavior of the "kink" in AlGaN/GaN HEMTs and correlate them with deep levels. The results demonstrate the role of the Poole-Frenkel effect in determining the occurrence of the kink and identify the experimental conditions that make it observable.
Iris type:
Articolo su rivista
Keywords:
Current collapse; deep levels; GaN HEMT; GaN reliability; kink effect
List of contributors:
Gao, Z; De Santi, C; Rampazzo, F; Saro, M; Fornasier, M; Meneghesso, G; Meneghini, M; Chini, A; Verzellesi, G; Zanoni, E
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