Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis
Academic Article
Publication Date:
2024
Short description:
Characterization and Advanced Modeling of Dielectric Defects in Low-Thermal Budget RMG MOSFETs Using 1/f Noise Analysis / Asanovski, R.; Arimura, H.; De Marneffe, J. -F.; Palestri, P.; Horiguchi, N.; Kaczer, B.; Selmi, L.; Franco, J.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 71:3(2024), pp. 1745-1751. [10.1109/TED.2024.3351598]
Iris type:
Articolo su rivista
Keywords:
1/f noise; characterization; complementary field-effect transistor (CFET); replacement metal gate (RMG); sequential 3-D;
List of contributors:
Asanovski, R.; Arimura, H.; De Marneffe, J. -F.; Palestri, P.; Horiguchi, N.; Kaczer, B.; Selmi, L.; Franco, J.
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