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Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology

Articolo
Data di Pubblicazione:
2011
Citazione:
Design and characterization of current-assisted photonic demodulators in 0.18-um CMOS technology / G. F., Dalla Betta; S., Donati; Q. D., Hossain; G., Martini; L., Pancheri; Saguatti, Davide; D., Stoppa; Verzellesi, Giovanni. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - STAMPA. - 58:6(2011), pp. 1702-1709. [10.1109/TED.2011.2126578]
Abstract:
We report on the design of a Current-Assisted Photonic Demodulator (CAPD) using a standard 0.18-um CMOS technology, and its electro-optical characterization. The device can perform both light detection and demodulation in the charge domain, owing to a drift field generated in the silicon substrate by a majority carrier flow. Minimum-size, 10×10 um2 CAPDs exhibit a DC charge-transfer efficiency larger than 80% (corresponding to a demodulation contrast larger than 40% under sine-wave modulation) at the modest power consumption of 10 uW, and a 3-dB bandwidth > 45 MHz. An excellentlinearity with an error lower than 0.11% is obtained in phasemeasurements. CAPDs with optimized modulation-electrode geometries are finally designed, aiming at improved contrast-vs-power trade-off.
Tipologia CRIS:
Articolo su rivista
Keywords:
CMOS optical sensor; photonic demodulator; time-resolved photon detection; time of flight; fluorescence lifetime imaging.
Elenco autori:
G. F., Dalla Betta; S., Donati; Q. D., Hossain; G., Martini; L., Pancheri; Saguatti, Davide; D., Stoppa; Verzellesi, Giovanni
Autori di Ateneo:
VERZELLESI Giovanni
Link alla scheda completa:
https://iris.unimore.it/handle/11380/652838
Pubblicato in:
IEEE TRANSACTIONS ON ELECTRON DEVICES
Journal
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