P-DERIVED VALENCE STATES AT THE REACTIVE GAP(110)/YB INTERFACE VIA P L2,3VV AUGER LINE-SHAPE SPECTROSCOPY
Articolo
Data di Pubblicazione:
1992
Citazione:
P-DERIVED VALENCE STATES AT THE REACTIVE GAP(110)/YB INTERFACE VIA P L2,3VV AUGER LINE-SHAPE SPECTROSCOPY / M., Sancrotti; L., Duo; R., Cosso; D'Addato, Sergio; A., Ruocco; Nannarone, Stefano; P., Weightman. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 45:(1992), pp. 6255-6258. [10.1103/PhysRevB.45.6255]
Abstract:
We report on the evolution of the P L2,3 VV Auger line shape with increasing Yb deposition onto the GaP(110) surface. Strong affinity with Si L2,3 VV profiles measured from the Si(111)/Yb interface and nearly-d0 metal silicides (Ca silicides, Gd silicides) is pointed out and fruitfully exploited to model the character of the P 3p-derived valence states in the Yb phosphidelike reaction products. The chemical bond is thus ascribed mainly to the formation of P 3p - Yb 5d hybrids.
Tipologia CRIS:
Articolo su rivista
Keywords:
INVERSE-PHOTOEMISSION; CALCIUM SILICIDES; SYNCHROTRON-RADIATION; ELECTRONIC-STRUCTURE; CHEMICAL-BOND; METAL; SILICON; SPECTRA
Elenco autori:
M., Sancrotti; L., Duo; R., Cosso; D'Addato, Sergio; A., Ruocco; Nannarone, Stefano; P., Weightman
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