Energy loss spectroscopy (ELS) on the Si-Au system

Energy loss spectroscopy obtained on clean cleaved Si(111) covered with different gold thickness is considered. The results indicate that in the Si-Au system the interface is characterized by a Si rich phase with a well defined electron transition at 7. 5 ev energy loss. Increasing Au thickness the main changes in the spectrum arise in the low energy loss region and a gold-like behavior is observed for a gold coverage of 60 monolayers. The effects of annealing at 350 degree C are reported.