Publication Date:
2026
Short description:
Modeling Dielectric Breakdown in Scaled Nodes: Challenges and Perspectives / Puglisi, F. M.; Padovani, A.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - (2026), pp. 1-7. [10.1109/TED.2026.3669887]
abstract:
This article reviews the state of the art in dielectric breakdown (DB) modeling, with particular emphasis on recent atomistic approaches, and on the key characteristics that are expected to play a major role in enabling effective design-for-reliability of future ultra-scaled devices.
Iris type:
Articolo su rivista
Keywords:
Dielectrics; Electric fields; Silicon compounds; Reliability; Electron traps; Tunneling; Integrated circuit modeling; Logic gates; Lattices; Hydrogen; Atomistic models; carrier injection (CI); dielectric breakdown (DB); reliability; scaling
List of contributors:
Puglisi, F. M.; Padovani, A.
Published in: