Impact of Scattering on Graphene Geometric Diodes: A Comparative Analysis Between Simulations and Experiments

This work presents a comparative analysis between simulations and experiments aimed at elucidating the origin of the limited asymmetry observed in graphene geometric diodes grown by chemical vapor deposition. Using self-consistent Monte Carlo simulations, we investigate how the effect of various scattering mechanisms progressively suppresses asymmetric transport in geometric diodes. The simulation results highlight that the key parameter governing device performance is the ratio between carriers' mean free path and device length and geometry. Comparison with experiments reveals that for micrometer-scale structures, achieving nonlinear transport in the low-bias regime would require extremely high carrier mobilities.