Bismuth and Antimony on GaAs(110): Dielectric and Electronic Properties

Articolo

Data di Pubblicazione:

1992

Citazione:

Bismuth and Antimony on GaAs(110): Dielectric and Electronic Properties / M. G., Betti; M., Pedio; Del Pennino, Umberto; C., Mariani. - In: PHYSICAL REVIEW. B, CONDENSED MATTER. - ISSN 0163-1829. - STAMPA. - 45:(1992), pp. 14057-14064. [10.1103/PhysRevB.45.14055]

Abstract:

By means of electron spectrosocpies, HREELS and UPS, the Electronic and Dielectric properties of the Bismuth and Antimony interfaces with GaAs(110) have been studied.

Tipologia CRIS:

Articolo su rivista

Keywords:

Bismuth; Antimony; GaAs(110); Dielectric and Electronic Properties

Elenco autori:

M. G., Betti; M., Pedio; Del Pennino, Umberto; C., Mariani

Link alla scheda completa:

https://iris.unimore.it/handle/11380/761652

Pubblicato in:

PHYSICAL REVIEW. B, CONDENSED MATTER

Journal