High Quality MoS 2 Layered Thin Films Obtained by Ionized Jet Deposition Investigated by X‐ray Absorption Spectroscopy at S L 2,3 and Mo M 2,3 Edges
Articolo
Data di Pubblicazione:
2026
Citazione:
High Quality MoS
2
Layered Thin Films Obtained by Ionized Jet Deposition Investigated by X‐ray Absorption Spectroscopy at S L
2,3
and Mo M
2,3
Edges / Giovanelli, G., Lodi, A., Giglia, A., Mahne, N., Kesarwani, R., Vejpravova, J., Rühl, S., Ligorio, G., List‐kratochvil, E.J.W., Nasi, L., Timpel, M., Nardi, M.V., Pasquali, L.. - In: ADVANCED MATERIALS INTERFACES. - ISSN 2196-7350. - (2026), pp. 1-8. [10.1002/admi.70606]
Abstract:
We present a comparative soft x-ray absorption spectroscopy (XAS) study of the sulfur L2,3 and molybdenum M2,3 absorption
edges in MoS2 prepared by different fabrication routes, including bulk crystallization, mechanical exfoliation, chemical vapor
deposition(CVD),andionizedjetdeposition(IJD).TheSL2,3 edgesrevealpronounceddifferencesinpre-edgeandmain-edgefine
structurethatsensitivelyreflectthedegreeofstructuralorder,dimensionality,andelectronichybridizationbetweenS3pandMo
4dstates.Bulk,exfoliated,andCVD-grownsamplesexhibitwell-resolvedmultiplefeaturescharacteristicoflayeredandordered
two-dimensional(2D)MoS2,whereasas-depositedIJD-grownfilmsdisplaybroadened,weaklystructuredspectraconsistentwith
anamorphousphaseandpoorlydefinedstoichiometry.Uponmoderateannealingat250◦C,IJD-grownfilmsdevelopclearspectral
signaturesoflayeredMoS2,indicatingtheformationofanorderedcrystalline2H-MoS2 phase.ComplementaryanalysisoftheMo
M2,3 edges shows a concomitant narrowing and energy shift of the M3 feature toward values typical of well-ordered 2D MoS2.
TheseresultsdemonstratethatSL2,3 andMoM2,3 XASprovideasensitiveprobeofsynthesis-dependentelectronicstructurein
MoS2 andconfirmIJDasaviable,low-temperatureroutetoelectronicallyordered2DMoS2 phases.
edges in MoS2 prepared by different fabrication routes, including bulk crystallization, mechanical exfoliation, chemical vapor
deposition(CVD),andionizedjetdeposition(IJD).TheSL2,3 edgesrevealpronounceddifferencesinpre-edgeandmain-edgefine
structurethatsensitivelyreflectthedegreeofstructuralorder,dimensionality,andelectronichybridizationbetweenS3pandMo
4dstates.Bulk,exfoliated,andCVD-grownsamplesexhibitwell-resolvedmultiplefeaturescharacteristicoflayeredandordered
two-dimensional(2D)MoS2,whereasas-depositedIJD-grownfilmsdisplaybroadened,weaklystructuredspectraconsistentwith
anamorphousphaseandpoorlydefinedstoichiometry.Uponmoderateannealingat250◦C,IJD-grownfilmsdevelopclearspectral
signaturesoflayeredMoS2,indicatingtheformationofanorderedcrystalline2H-MoS2 phase.ComplementaryanalysisoftheMo
M2,3 edges shows a concomitant narrowing and energy shift of the M3 feature toward values typical of well-ordered 2D MoS2.
TheseresultsdemonstratethatSL2,3 andMoM2,3 XASprovideasensitiveprobeofsynthesis-dependentelectronicstructurein
MoS2 andconfirmIJDasaviable,low-temperatureroutetoelectronicallyordered2DMoS2 phases.
Tipologia CRIS:
Articolo su rivista
Elenco autori:
Giovanelli, Giulia; Lodi, Alessandro; Giglia, Angelo; Mahne, Nicola; Kesarwani, Rahul; Vejpravova, Jana; Rühl, Steffen; Ligorio, Giovanni; List‐kratochvil, Emil J. W.; Nasi, Lucia; Timpel, Melanie; Nardi, Marco V.; Pasquali, Luca
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