Data di Pubblicazione:
2012
Citazione:
Field plate related reliability improvements in GaN-on-Si HEMTs / Chini, Alessandro; Soci, Fabio; Fantini, Fausto; Nanni, A.; Pantellini, A.; Lanzieri, C.; Bisi, D.; Meneghesso, G.; Zanoni, E.. - In: MICROELECTRONICS RELIABILITY. - ISSN 0026-2714. - STAMPA. - 52:9-10(2012), pp. 2153-2158. [10.1016/j.microrel.2012.06.040]
Abstract:
State of the art GaN on Silicon HEMTs fabricated with and without a field-plate structure have been tested by means of DC and RF reliability tests. The introduction of the field-plate structure greatly improves device reliability both during DC as well as RF testing. Results are thus suggesting that reliability in NOFP and FP devices is mainly limited by the high electric fields within the device structure causing an increase in traps concentration.
Tipologia CRIS:
Articolo su rivista
Keywords:
GaN Hemt; Reliability
Elenco autori:
Chini, Alessandro; Soci, Fabio; Fantini, Fausto; Nanni, A.; Pantellini, A.; Lanzieri, C.; Bisi, D.; Meneghesso, G.; Zanoni, E.
Link alla scheda completa:
Pubblicato in: