Unintentional High-Density p‑Type Modulation Doping of a GaAs/ AlAs Core−Multishell Nanowire
Articolo
Data di Pubblicazione:
2014
Citazione:
Unintentional High-Density p‑Type Modulation Doping of a GaAs/
AlAs Core−Multishell Nanowire / J., J., P., P., A., M., I., B., M., R., A., B., Goldoni, G., T., S., P., K., A., K., Hadas, S., D. K., M.. - In: NANO LETTERS. - ISSN 1530-6984. - STAMPA. - 14:5(2014), pp. 2807-2814. [10.1021/nl500818k]
Abstract:
Achieving significant doping in GaAs/AlAs core/
shell nanowires (NWs) is of considerable technological importance
but remains a challenge due to the amphoteric behavior of the
dopant atoms. Here we show that placing a narrow GaAs quantum
well in the AlAs shell effectively getters residual carbon acceptors
leading to an unintentional p-type doping. Magneto-optical studies
of such a GaAs/AlAs core−multishell NW reveal quantum
confined emission. Theoretical calculations of NW electronic
structure confirm quantum confinement of carriers at the core/
shell interface due to the presence of ionized carbon acceptors in
the 1 nm GaAs layer in the shell. Microphotoluminescence in high
magnetic field shows a clear signature of avoided crossings of the n
= 0 Landau level emission line with the n = 2 Landau level TO
phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole
density in the structure
shell nanowires (NWs) is of considerable technological importance
but remains a challenge due to the amphoteric behavior of the
dopant atoms. Here we show that placing a narrow GaAs quantum
well in the AlAs shell effectively getters residual carbon acceptors
leading to an unintentional p-type doping. Magneto-optical studies
of such a GaAs/AlAs core−multishell NW reveal quantum
confined emission. Theoretical calculations of NW electronic
structure confirm quantum confinement of carriers at the core/
shell interface due to the presence of ionized carbon acceptors in
the 1 nm GaAs layer in the shell. Microphotoluminescence in high
magnetic field shows a clear signature of avoided crossings of the n
= 0 Landau level emission line with the n = 2 Landau level TO
phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large two-dimensional hole
density in the structure
Tipologia CRIS:
Articolo su rivista
Keywords:
nanowires; doping; GaAs/AlGaAs heterostructures
Elenco autori:
J., Jadczak; P., Plochocka; A., Mitioglu; I., Breslavetz; M., Royo; A., Bertoni; Goldoni, Guido; T., Smolenski; P., Kossacki; A., Kretinin; Hadas, Shtrikman; D. K., Maude
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