Numerical Analysis of the Gate Voltage Dependence of the Series Resistances and Effective Channel Length in sub-micron GaAs MESFETs

Numerical Analysis of the Gate Voltage Dependence of the Series Resistances and Effective Channel Length in sub-micron GaAs MESFETs / Selmi, Luca; Menozzi, R; Gandolfi, P; Ricco, B.. - In: IEEE TRANSACTIONS ON ELECTRON DEVICES. - ISSN 0018-9383. - 39:9(1992), pp. 2015-2020. [10.1109/16.155872]