Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects
Contributo in Atti di convegno
Data di Pubblicazione:
2017
Citazione:
Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects / Badami, O., Driussi, F., Palestri, P., Selmi, L., Esseni, D.. - ELETTRONICO. - (2017), pp. 314-317. (Internetional Electron Device Meeting (IEDM) San Francisco Dicembre 2017) [10.1109/IEDM.2017.8268382].
Abstract:
We perform a comprehensive comparison of FinFETs,
stacked nanowires (stacked NWs), circular and square
gate-all-around (GAA) -FETs with same footprint, by
using an in-house deterministic BTE solver accounting for
quantum confinement, a wide set of scattering mechanisms
and self-heating. We show that an increase in surface
roughness (SR) can frustrate the improvement in on
current, I, that for high-quality interfaces we observe in
stacked NWs compared to FinFETs. Simulations suggest
that SR also influences whether or not In0.53Ga0.47As can
provide better I than strained silicon (sSi).
stacked nanowires (stacked NWs), circular and square
gate-all-around (GAA) -FETs with same footprint, by
using an in-house deterministic BTE solver accounting for
quantum confinement, a wide set of scattering mechanisms
and self-heating. We show that an increase in surface
roughness (SR) can frustrate the improvement in on
current, I, that for high-quality interfaces we observe in
stacked NWs compared to FinFETs. Simulations suggest
that SR also influences whether or not In0.53Ga0.47As can
provide better I than strained silicon (sSi).
Tipologia CRIS:
Relazione in Atti di Convegno
Keywords:
Computational modeling; Computer architecture; FinFETs; Gallium arsenide; Logic gates; Scattering
Elenco autori:
Badami, O.; Driussi, F.; Palestri, P.; Selmi, L.; Esseni, D.
Link alla scheda completa:
Titolo del libro:
Technical Digest - International Electron Devices Meeting, IEDM
Pubblicato in: