Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs
Contributo in Atti di convegno
Data di Pubblicazione:
2007
Citazione:
Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs / Agostinelli, Matteo; Alioto, M.; Esseni, David; Selmi, Luca. - 2007:(2007), pp. 191-194. ( ESSDERC 2007 - 37th European Solid-State Device Research Conference Munich, deu 11-13/09/2007) [10.1109/ESSDERC.2007.4430911].
Abstract:
This paper investigates with a mixed device/circuit
simulation methodology the effectiveness of DG SOI MOSFETs
compared to conventional bulkMOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger VT sensitivity to back-biasing.
Tipologia CRIS:
Relazione in Atti di Convegno
Elenco autori:
Agostinelli, Matteo; Alioto, M.; Esseni, David; Selmi, Luca
Link alla scheda completa:
Titolo del libro:
Proceedings ESSDERC 2007 Conference
Pubblicato in: