Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs

Conference Paper

Publication Date:

2007

Short description:

Trading off static power and dynamic performance in CMOS digital circuits: bulk versus double gate SOI MOSFETs / Agostinelli, Matteo; Alioto, M.; Esseni, David; Selmi, Luca. - 2007:(2007), pp. 191-194. ( ESSDERC 2007 - 37th European Solid-State Device Research Conference Munich, deu 11-13/09/2007) [10.1109/ESSDERC.2007.4430911].

abstract:

This paper investigates with a mixed device/circuit simulation methodology the effectiveness of DG SOI MOSFETs compared to conventional bulkMOSFETs for the implementation of low standby power circuit techniques. Our results indicate that DG MOSFETs offer significant advantages essentially because of the larger VT sensitivity to back-biasing.

Iris type:

Relazione in Atti di Convegno

List of contributors:

Agostinelli, Matteo; Alioto, M.; Esseni, David; Selmi, Luca

Authors of the University:

SELMI LUCA

Handle:

https://iris.unimore.it/handle/11380/1163048

Book title:

Proceedings ESSDERC 2007 Conference

Published in:

PROCEEDINGS OF THE EUROPEAN SOLID STATE DEVICE RESEARCH CONFERENCE

Series