Frequency Resolved Measurements for the Characterization of MOSFET Parameters at Low Longitudinal Fields

A new technique is presented to extract the main parameters required for transistor modeling at low longitudinal fields (parasitic resistance, intrinsic conductivity factor, threshold voltage, and body factor k) from a single MOSFET. The method makes use of easy-to-perform ac frequency-resolved measurements to overcome repeatability and accuracy problems encountered with de data. The technique has been satisfactorily validated on MOSFET's down to 0.8 mu m channel length.